Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TSM60NB099PW C1G

TSM60NB099PW C1G

TSM60NB099PW C1G

Part NumberTSM60NB099PW C1G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 600V 38A TO247

DatasheetTSM60NB099PW

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247

To learn about the specification of TSM60NB099PW C1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM60NB099PW C1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM60NB099PW C1G.
We are offering TSM60NB099PW C1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TSM60NB099PW C1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM60NB099PW
Standard Package	900
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2587pF @ 100V
FET Feature	-
Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

TSM60NB099PW C1G - Related Products

	SI4848ADY-T1-GE3	Vishay Siliconix, N-Channel 150V 5.5A (Tc) 5W (Tc) Surface Mount 8-SOIC, TrenchFET®	View
	STS5N15F4	STMicroelectronics, N-Channel 150V 5A (Tc) 2.5W (Tc) Surface Mount 8-SO, DeepGATE™, STripFET™	View
	TPH2900ENH,L1Q	Toshiba Semiconductor and Storage, N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	IXTH1N450HV	IXYS, N-Channel 4500V 1A (Tc) 520W (Tc) Through Hole TO-247HV,	View
	FDS86252	ON Semiconductor, N-Channel 150V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC, PowerTrench®	View
	PSMN3R0-30YL,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFB3607PBF	Infineon Technologies, N-Channel 75V 80A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDMS7650DC	ON Semiconductor, N-Channel 30V 47A (Ta), 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®	View
	SQD50N04-5M6_T4GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	TPN30008NH,LQ	Toshiba Semiconductor and Storage, N-Channel 80V 9.6A (Tc) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	IRLML0100TRPBF	Infineon Technologies, N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	FDMS1D4N03S	ON Semiconductor, N-Channel 30V 211A (Tc) 74W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View

TSM60NB099PW C1G - Tags

TSM60NB099PW C1G TSM60NB099PW C1G PDF TSM60NB099PW C1G datasheet TSM60NB099PW C1G specification TSM60NB099PW C1G image TSM60NB099PW C1G India Renesas Electronics India TSM60NB099PW C1G buy TSM60NB099PW C1G TSM60NB099PW C1G price TSM60NB099PW C1G distributor TSM60NB099PW C1G supplier TSM60NB099PW C1G wholesales