Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TSM60NB099PW C1G

TSM60NB099PW C1G

TSM60NB099PW C1G

Part NumberTSM60NB099PW C1G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 600V 38A TO247

DatasheetTSM60NB099PW

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247

To learn about the specification of TSM60NB099PW C1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM60NB099PW C1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM60NB099PW C1G.
We are offering TSM60NB099PW C1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TSM60NB099PW C1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM60NB099PW
Standard Package	900
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2587pF @ 100V
FET Feature	-
Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

TSM60NB099PW C1G - Related Products

	FDS6570A	ON Semiconductor, N-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	FDMS8560S	ON Semiconductor, N-Channel 25V 30A (Ta), 70A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	PHP18NQ10T,127	Nexperia USA Inc., N-Channel 100V 18A (Tc) 79W (Tc) Through Hole TO-220AB, TrenchMOS™	View
	STN1NK60Z	STMicroelectronics, N-Channel 600V 300mA (Tc) 3.3W (Tc) Surface Mount SOT-223, SuperMESH™	View
	STD6NF10T4	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™	View
	STD12N65M2	STMicroelectronics, N-Channel 650V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2	View
	RCJ700N20TL	Rohm Semiconductor, N-Channel 200V 70A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View
	DMT6015LSS-13	Diodes Incorporated, N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO,	View
	STB10LN80K5	STMicroelectronics, N-Channel 800V 8A (Tc) 110W (Tc) Surface Mount D2PAK, MDmesh™ K5	View
	FDMC8010DC	ON Semiconductor, N-Channel 30V 37A (Ta) 3W (Ta) Surface Mount 8-PQFN (3.3x3.3),	View
	SISA96DN-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	SUM50020E-GE3	Vishay Siliconix, N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®	View

TSM60NB099PW C1G - Tags

TSM60NB099PW C1G TSM60NB099PW C1G PDF TSM60NB099PW C1G datasheet TSM60NB099PW C1G specification TSM60NB099PW C1G image TSM60NB099PW C1G India Renesas Electronics India TSM60NB099PW C1G buy TSM60NB099PW C1G TSM60NB099PW C1G price TSM60NB099PW C1G distributor TSM60NB099PW C1G supplier TSM60NB099PW C1G wholesales